IRFB9N60A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

170W Tc

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

750mOhm @ 5.5A, 10V

Power Dissipation :

170W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Rds On Max :

750 mΩ

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

9.2A

Lead Free :

Lead Free

Turn On Delay Time :

13 ns

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

25ns

Fall Time (Typ) :

22 ns

Drain to Source Resistance :

750mOhm

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Package / Case :

TO-220-3

Packaging :

Tube

Weight :

6.000006g

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Voltage - Rated DC :

600V

Factory Lead Time :

8 Weeks

Height :

9.01mm

Current Rating :

9.2A

Published :

2014

Turn-Off Delay Time :

30 ns

Length :

10.41mm

Number of Pins :

3

Nominal Vgs :

4 V

Min Operating Temperature :

-55°C

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Resistance :

750mOhm

Input Capacitance :

1.4nF

Vgs (Max) :

±30V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Mount :

Through Hole

Element Configuration :

Single