IRFB9N30APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

450mOhm @ 5.6A, 10V

Weight :

6.000006g

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Operating Temperature :

150°C

Length :

10.41mm

Drain to Source Resistance :

450mOhm

Input Capacitance :

920pF

Fall Time (Typ) :

29 ns

Published :

2009

Power Dissipation :

96W

Drain to Source Voltage (Vdss) :

300V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

300V

Packaging :

Tube

Continuous Drain Current (ID) :

9.3A

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Supplier Device Package :

TO-220AB

Rise Time :

25ns

Height :

9.01mm

Rds On Max :

450 mΩ

Mounting Type :

Through Hole

FET Type :

N-Channel

Power Dissipation-Max :

96W Tc

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Turn-Off Delay Time :

35 ns

Vgs (Max) :

±30V

Element Configuration :

Single

Number of Pins :

3

Turn On Delay Time :

10 ns