IRFB812PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

2.2Ohm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.6A

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 2.2A, 10V

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Length :

10.67mm

Number of Elements :

1

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

Element Configuration :

Single

Recovery Time :

110 ns

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Transistor Application :

SWITCHING

Power Dissipation-Max :

78W Tc

Height :

16.51mm

Width :

4.83mm

FET Type :

N-Channel

Fall Time (Typ) :

17 ns

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

15 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation :

78W

Turn On Delay Time :

14 ns

Vgs (Max) :

±20V

Number of Terminations :

3

Number of Pins :

3

Packaging :

Tube

Lead Free :

Lead Free

Published :

2008

Radiation Hardening :

No

Mounting Type :

Through Hole

Turn-Off Delay Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC