IRFB7730PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

375W

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Input Capacitance (Ciss) (Max) @ Vds :

13660pF @ 25V

Max Junction Temperature (Tj) :

175°C

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

195A

Drain to Source Breakdown Voltage :

75V

Mounting Type :

Through Hole

Height :

19.8mm

REACH SVHC :

No SVHC

Rise Time :

120ns

Packaging :

Tube

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Number of Channels :

1

Fall Time (Typ) :

115 ns

Turn-Off Delay Time :

180 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Width :

4.83mm

Element Configuration :

Single

Published :

2001

Weight :

6.000006g

Lead Free :

Lead Free

Threshold Voltage :

2.1V

Length :

10.67mm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

407nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

375W Tc

Series :

HEXFET®

Turn On Delay Time :

21 ns

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

FET Type :

N-Channel