IRFB7546PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Fall Time (Typ) :

34 ns

Number of Terminations :

3

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

32 ns

Number of Elements :

1

Power Dissipation :

99W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

75A

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

FET Type :

N-Channel

Power Dissipation-Max :

99W Tc

Height :

16.51mm

Series :

HEXFET®, StrongIRFET™

Width :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Rise Time :

51ns

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Element Configuration :

Single

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Length :

10.67mm

Package / Case :

TO-220-3

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Lead Free :

Lead Free

Vgs (Max) :

±20V

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 45A, 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Threshold Voltage :

3.7V

Mount :

Through Hole

Packaging :

Tube