IRFB7545PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Threshold Voltage :

3.7V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rise Time :

72ns

FET Type :

N-Channel

Fall Time (Typ) :

43 ns

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 57A, 10V

Turn-Off Delay Time :

44 ns

Series :

HEXFET®, StrongIRFET™

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

95A

Height :

16.51mm

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

125W Tc

Turn On Delay Time :

12 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

125W

Published :

2008

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V

Length :

10.67mm

Weight :

6.000006g

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4010pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Channels :

1