IRFB7540PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

58 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Length :

10.67mm

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Threshold Voltage :

3.7V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 65A, 10V

Power Dissipation-Max :

160W Tc

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Fall Time (Typ) :

56 ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Height :

16.51mm

Width :

4.83mm

Weight :

6.000006g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®, StrongIRFET™

Number of Channels :

1

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

76ns

Published :

2008

Package / Case :

TO-220-3

Lead Free :

Lead Free

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4555pF @ 25V

Continuous Drain Current (ID) :

110A