IRFB7537PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 100A, 10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rise Time :

105ns

Current - Continuous Drain (Id) @ 25°C :

173A Tc

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Threshold Voltage :

3.7V

Turn-Off Delay Time :

82 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

700A

Fall Time (Typ) :

84 ns

Number of Pins :

3

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

173A

Avalanche Energy Rating (Eas) :

554 mJ

Transistor Application :

SWITCHING

Packaging :

Tube

Number of Channels :

1

REACH SVHC :

No SVHC

Power Dissipation :

230W

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

230W Tc

Width :

4.83mm

Height :

16.51mm

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

15 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.7V @ 150μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®, StrongIRFET™

Mount :

Through Hole