IRFB7534PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0024Ohm

Width :

4.83mm

Published :

2013

Element Configuration :

Single

Mount :

Through Hole

Lead Free :

Lead Free

Threshold Voltage :

3.7V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Case Connection :

Isolated

Factory Lead Time :

12 Weeks

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

DS Breakdown Voltage-Min :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Fall Time (Typ) :

93 ns

Pulsed Drain Current-Max (IDM) :

944A

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

Vgs (Max) :

±20V

Series :

HEXFET®, StrongIRFET™

Number of Channels :

1

Power Dissipation-Max :

294W Tc

Turn-Off Delay Time :

118 ns

Number of Elements :

1

Rise Time :

134ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

FET Type :

N-Channel

Number of Terminations :

3

Length :

10.67mm

Number of Pins :

3

Power Dissipation :

294W

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Weight :

6.000006g

Continuous Drain Current (ID) :

195A

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Avalanche Energy Rating (Eas) :

775 mJ

Input Capacitance (Ciss) (Max) @ Vds :

10034pF @ 25V

Height :

16.51mm

Turn On Delay Time :

20 ns