IRFB7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Threshold Voltage :

3.7V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1025 mJ

Series :

HEXFET®, StrongIRFET™

Length :

10.67mm

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Number of Pins :

3

Package / Case :

TO-220-3

Rise Time :

141ns

Width :

4.83mm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

760A

Power Dissipation-Max :

375W Tc

Packaging :

Tube

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

3

ECCN Code :

EAR99

Height :

16.51mm

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Fall Time (Typ) :

104 ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Weight :

6.000006g

Mounting Type :

Through Hole

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain-source On Resistance-Max :

0.002Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

172 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

195A

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Turn On Delay Time :

52 ns

Operating Mode :

ENHANCEMENT MODE