IRFB7440PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Pulsed Drain Current-Max (IDM) :

772A

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Rise Time :

68ns

REACH SVHC :

No SVHC

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

Turn-Off Delay Time :

115 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn On Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 100A, 10V

Threshold Voltage :

3V

Operating Temperature :

-55°C~175°C TJ

Height :

16.51mm

Nominal Vgs :

3 V

Number of Elements :

1

Resistance :

2.5MOhm

Number of Pins :

3

Width :

4.83mm

Lead Free :

Lead Free

Continuous Drain Current (ID) :

120A

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Packaging :

Tube

Published :

2001

Case Connection :

DRAIN

Number of Terminations :

3

Transistor Application :

SWITCHING

Mount :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

208W

Recovery Time :

24 ns

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

143W Tc

Series :

HEXFET®, StrongIRFET™