IRFB7437PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

HEXFET®, StrongIRFET™

Power Dissipation-Max :

230W Tc

Threshold Voltage :

3V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Fall Time (Typ) :

53 ns

Width :

4.83mm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Turn-Off Delay Time :

78 ns

Drain to Source Breakdown Voltage :

40V

Mount :

Through Hole

Rise Time :

70ns

Resistance :

2MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

30 ns

FET Type :

N-Channel

Package / Case :

TO-220-3

Turn On Delay Time :

19 ns

REACH SVHC :

No SVHC

Nominal Vgs :

3 V

Element Configuration :

Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

230W

Height :

16.51mm

Published :

2012

Continuous Drain Current (ID) :

195A

Lead Free :

Lead Free

Length :

10.67mm

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant