IRFB7437PBF
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- Mfr.Part #
- IRFB7437PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A TO220AB
- Stock
- 30,272
- In Stock ：
- 30,272
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7330pF @ 25V
- Turn-Off Delay Time :
- 78 ns
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®, StrongIRFET™
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 150μA
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 53 ns
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 100A, 10V
- ECCN Code :
- EAR99
- Length :
- 10.67mm
- Continuous Drain Current (ID) :
- 195A
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Recovery Time :
- 30 ns
- Rise Time :
- 70ns
- Width :
- 4.83mm
- Turn On Delay Time :
- 19 ns
- Nominal Vgs :
- 3 V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 230W Tc
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 230W
- Resistance :
- 2MOhm
- Published :
- 2012
- Drain to Source Breakdown Voltage :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 3V
- Height :
- 16.51mm
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Datasheets
- IRFB7437PBF
N-Channel Tube 2m Ω @ 100A, 10V ±20V 7330pF @ 25V 225nC @ 10V TO-220-3
IRFB7437PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7330pF @ 25V.This device conducts a continuous drain current (ID) of 195A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 78 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
IRFB7437PBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 78 ns
a threshold voltage of 3V
IRFB7437PBF Applications
There are a lot of Infineon Technologies
IRFB7437PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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