IRFB7434PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

68ns

Resistance :

1.6mOhm

Turn-Off Delay Time :

115 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

195A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Width :

4.83mm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

3 V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

FET Type :

N-Channel

Height :

16.51mm

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Mount :

Through Hole

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®, StrongIRFET™

Number of Terminations :

3

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Recovery Time :

38 ns

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Turn On Delay Time :

24 ns

Power Dissipation :

294W

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

10820pF @ 25V

ECCN Code :

EAR99

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

490 mJ

Threshold Voltage :

3V

Length :

10.67mm

Gate Charge (Qg) (Max) @ Vgs :

324nC @ 10V

Lead Free :

Lead Free

Published :

2012

Package / Case :

TO-220-3

Power Dissipation-Max :

294W Tc

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC