IRFB7430PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

100 ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Recovery Time :

52 ns

Transistor Element Material :

SILICON

Width :

4.83mm

Turn-Off Delay Time :

160 ns

Input Capacitance (Ciss) (Max) @ Vds :

14240pF @ 25V

Power Dissipation-Max :

375W Tc

Height :

16.51mm

Length :

10.67mm

Threshold Voltage :

2.2V

Packaging :

Tube

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

460nC @ 10V

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Published :

2008

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Vgs (Max) :

±20V

Number of Terminations :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

195A

Number of Elements :

1

Power Dissipation :

375W

Series :

HEXFET®, StrongIRFET™

Rise Time :

105ns

Element Configuration :

Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

760 mJ

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Mount :

Through Hole

Mounting Type :

Through Hole