IRFB61N15DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3470pF @ 25V

Length :

10.5156mm

Turn-Off Delay Time :

28 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

330W

Case Connection :

DRAIN

Continuous Drain Current (ID) :

60A

Resistance :

32ohm

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

250A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

51 ns

Nominal Vgs :

5.5 V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

32m Ω @ 36A, 10V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

16V

Number of Pins :

3

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Published :

2004

Vgs (Max) :

±30V

Rise Time :

110ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

150V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Mount :

Through Hole

Width :

4.69mm

Height :

15.24mm

Power Dissipation-Max :

2.4W Ta 330W Tc

Mounting Type :

Through Hole

Radiation Hardening :

No

Voltage - Rated DC :

150V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Current Rating :

60A

Series :

HEXFET®

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

520 mJ

Number of Elements :

1

Packaging :

Tube