IRFB61N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

28 ns

RoHS Status :

ROHS3 Compliant

Height :

15.24mm

Lead Free :

Lead Free

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

150V

Published :

2004

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

16V

Avalanche Energy Rating (Eas) :

520 mJ

Vgs (Max) :

±30V

FET Type :

N-Channel

Dual Supply Voltage :

150V

Voltage - Rated DC :

150V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3470pF @ 25V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

60A Tc

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Nominal Vgs :

5.5 V

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

18 ns

Fall Time (Typ) :

51 ns

Number of Terminations :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Pulsed Drain Current-Max (IDM) :

250A

Rds On (Max) @ Id, Vgs :

32m Ω @ 36A, 10V

Continuous Drain Current (ID) :

60A

Rise Time :

110ns

Packaging :

Tube

Width :

4.69mm

Power Dissipation-Max :

2.4W Ta 330W Tc

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Mount :

Through Hole

Power Dissipation :

330W

Resistance :

32ohm

Operating Mode :

ENHANCEMENT MODE

Current Rating :

60A

Transistor Element Material :

SILICON

Number of Pins :

3

Series :

HEXFET®

Length :

10.5156mm