IRFB5620PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

5 V

Contact Plating :

Tin

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

72.5mOhm

Vgs (Max) :

±20V

Height :

9.02mm

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

14.6ns

Drain to Source Voltage (Vdss) :

200V

Termination :

Through Hole

FET Type :

N-Channel

Power Dissipation-Max :

144W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

144W

Vgs(th) (Max) @ Id :

5V @ 100µA

Max Operating Temperature :

175°C

Turn On Delay Time :

8.6 ns

Lead Free :

Lead Free

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Dual Supply Voltage :

200V

Rds On Max :

72.5 mΩ

Resistance :

72.5mOhm

Turn-Off Delay Time :

17.1 ns

Continuous Drain Current (ID) :

25A

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Package / Case :

TO-220-3

Width :

4.826mm

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

72.5mOhm @ 15A, 10V

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

9.9 ns

Packaging :

Tube

Mount :

Through Hole

Supplier Device Package :

TO-220AB

Min Operating Temperature :

-55°C

Input Capacitance :

1.71nF

Radiation Hardening :

No

Threshold Voltage :

5V

Length :

10.668mm