IRFB5615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation :

144W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 100µA

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Published :

2006

Transistor Application :

AMPLIFIER

Width :

4.826mm

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

39m Ω @ 21A, 10V

REACH SVHC :

No SVHC

Rise Time :

23.1ns

Fall Time (Typ) :

13.2 ns

Resistance :

39mOhm

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Length :

10.668mm

Height :

9.02mm

Number of Terminations :

3

Package / Case :

TO-220-3

Element Configuration :

Single

Recovery Time :

120 ns

Power Dissipation-Max :

144W Tc

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Turn On Delay Time :

8.6 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

17.1 ns

Operating Temperature :

-55°C~175°C TJ