IRFB52N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

150V

Threshold Voltage :

5V

Series :

HEXFET®

Published :

2002

Recovery Time :

210 ns

Avalanche Energy Rating (Eas) :

470 mJ

Pulsed Drain Current-Max (IDM) :

240A

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING

Power Dissipation :

320W

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Transistor Element Material :

SILICON

Nominal Vgs :

5 V

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 25V

REACH SVHC :

No SVHC

Number of Terminations :

3

Vgs (Max) :

±30V

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Current Rating :

51A

Dual Supply Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

32ohm

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

32m Ω @ 36A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Turn-Off Delay Time :

28 ns

Fall Time (Typ) :

25 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB

Length :

10.66mm

Element Configuration :

Single

Power Dissipation-Max :

3.8W Ta 230W Tc

Voltage - Rated DC :

150V

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Number of Elements :

1

ECCN Code :

EAR99

Rise Time :

47ns

Height :

16.51mm

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Width :

4.82mm

Turn On Delay Time :

16 ns

Radiation Hardening :

No

Number of Pins :

3