IRFB4710PBF
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- Mfr.Part #
- IRFB4710PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO220AB
- Stock
- 34,580
- In Stock ：
- 34,580
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 200W
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Recovery Time :
- 110 ns
- Height :
- 8.77mm
- Threshold Voltage :
- 5.5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Termination :
- Through Hole
- Turn On Delay Time :
- 35 ns
- Mounting Type :
- Through Hole
- Nominal Vgs :
- 5.5 V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Published :
- 2001
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 41 ns
- Packaging :
- Tube
- Mount :
- Through Hole
- Resistance :
- 14mOhm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 75A
- Package / Case :
- TO-220-3
- Current Rating :
- 75A
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6160pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Series :
- HEXFET®
- Rise Time :
- 130ns
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 45A, 10V
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 250
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Fall Time (Typ) :
- 38 ns
- Datasheets
- IRFB4710PBF
N-Channel Tube 14m Ω @ 45A, 10V ±20V 6160pF @ 25V 170nC @ 10V TO-220-3
IRFB4710PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6160pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [41 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFB4710PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
a threshold voltage of 5.5V
IRFB4710PBF Applications
There are a lot of Infineon Technologies
IRFB4710PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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