IRFB4620PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Termination :

Through Hole

Power Dissipation-Max :

144W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

3V

Radiation Hardening :

No

Published :

2008

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

14.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Element Configuration :

Single

Width :

4.826mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Terminations :

3

Continuous Drain Current (ID) :

25A

Turn-Off Delay Time :

25.4 ns

Resistance :

72.5mOhm

Power Dissipation :

144W

Lead Free :

Lead Free

Rise Time :

22.4ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

ECCN Code :

EAR99

Series :

HEXFET®

Number of Pins :

3

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

72.5m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

5V @ 100µA

Length :

10.668mm

Height :

9.02mm

Turn On Delay Time :

13.4 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant