IRFB4615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Operating Temperature :

-55°C~175°C TJ

Resistance :

39mOhm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Lead Free :

Lead Free

Threshold Voltage :

3V

Mounting Type :

Through Hole

Element Configuration :

Single

Termination :

Through Hole

Rise Time :

35ns

Turn On Delay Time :

15 ns

Packaging :

Tube

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

150V

Rds On (Max) @ Id, Vgs :

39m Ω @ 21A, 10V

Power Dissipation :

144W

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

144W Tc

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 100µA

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

150V

REACH SVHC :

No SVHC

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Width :

4.826mm

Length :

10.668mm

Number of Elements :

1

Number of Terminations :

3

Continuous Drain Current (ID) :

35A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Series :

HEXFET®

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Radiation Hardening :

No

Vgs (Max) :

±20V

Published :

2008

Height :

16.51mm

Transistor Application :

SWITCHING

Nominal Vgs :

3 V