IRFB4610PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

73A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

70 ns

Current - Continuous Drain (Id) @ 25°C :

73A Tc

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Length :

10.54mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

290A

Lead Pitch :

2.54mm

Number of Pins :

3

Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Published :

2006

Reverse Recovery Time :

35 ns

Qualification Status :

Not Qualified

Height :

8.77mm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

18 ns

Recovery Time :

53 ns

Turn-Off Delay Time :

3 ns

Element Configuration :

Single

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

190W Tc

Number of Terminations :

3

Nominal Vgs :

4 V

Resistance :

14mOhm

Series :

HEXFET®

FET Type :

N-Channel

Power Dissipation :

190W

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

JEDEC-95 Code :

TO-220AB

Rise Time :

87ns

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Current Rating :

73A

Vgs(th) (Max) @ Id :

4V @ 100µA