IRFB4510PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Case Connection :

DRAIN

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 37A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 100µA

Power Dissipation-Max :

140W Tc

Published :

2008

Series :

HEXFET®

Width :

4.83mm

Nominal Vgs :

2 V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

REACH SVHC :

No SVHC

Packaging :

Tube

Threshold Voltage :

2V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

250A

Power Dissipation :

140W

Continuous Drain Current (ID) :

62A

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Turn On Delay Time :

13 ns

Height :

9.02mm

Rise Time :

32ns

Lead Free :

Lead Free

Length :

10.67mm

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 50V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Turn-Off Delay Time :

28 ns

Vgs (Max) :

±20V

Number of Elements :

1

Factory Lead Time :

12 Weeks