IRFB4510PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Width :

4.83mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 37A, 10V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

2V

Number of Pins :

3

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

62A

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

250A

Turn On Delay Time :

13 ns

Height :

9.02mm

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Number of Terminations :

3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Power Dissipation :

140W

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 50V

Element Configuration :

Single

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Nominal Vgs :

2 V

Factory Lead Time :

12 Weeks

Length :

10.67mm

Rise Time :

32ns

Published :

2008

Power Dissipation-Max :

140W Tc

Turn-Off Delay Time :

28 ns

Radiation Hardening :

No

Vgs (Max) :

±20V