IRFB4510GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Power Dissipation-Max :

140W Tc

FET Type :

N-Channel

Input Capacitance :

3.18nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

62A

Series :

HEXFET®

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Power Dissipation :

140W

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Max Operating Temperature :

175°C

RoHS Status :

RoHS Compliant

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Rds On Max :

13.5 mΩ

Vgs(th) (Max) @ Id :

4V @ 100µA

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

13.5mOhm @ 37A, 10V

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole