IRFB4410ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

250

Mounting Type :

Through Hole

Fall Time (Typ) :

57 ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

242 mJ

Power Dissipation-Max :

230W Tc

Operating Mode :

ENHANCEMENT MODE

Length :

10.6426mm

Drain Current-Max (Abs) (ID) :

97A

Number of Pins :

3

Power Dissipation :

230W

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Termination :

Through Hole

Transistor Element Material :

SILICON

Element Configuration :

Single

Mount :

Through Hole

Dual Supply Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Terminal Finish :

MATTE TIN OVER NICKEL

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

RoHS Status :

ROHS3 Compliant

Height :

19.8mm

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Recovery Time :

57 ns

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Resistance :

9mOhm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Turn On Delay Time :

16 ns

Max Junction Temperature (Tj) :

175°C

Published :

2004

Width :

4.82mm

Vgs(th) (Max) @ Id :

4V @ 150μA

Radiation Hardening :

No

Turn-Off Delay Time :

43 ns

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Continuous Drain Current (ID) :

96A

Rise Time :

52ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

100V

Threshold Voltage :

2V

Nominal Vgs :

4 V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Number of Channels :

1