IRFB4410ZGPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

57 ns

Turn On Delay Time :

16 ns

Case Connection :

DRAIN

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Vgs (Max) :

±20V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

242 mJ

Vgs(th) (Max) @ Id :

4V @ 150μA

Series :

HEXFET®

ECCN Code :

EAR99

Height :

16.51mm

Published :

2009

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Width :

4.826mm

Turn-Off Delay Time :

43 ns

Nominal Vgs :

4 V

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

100V

Mount :

Through Hole

Resistance :

9mOhm

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Length :

10.668mm

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Number of Pins :

3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rise Time :

52ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Power Dissipation :

230W

Number of Elements :

1

Power Dissipation-Max :

230W Tc

Continuous Drain Current (ID) :

97A