IRFB4410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

10MOhm

Width :

4.82mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

96A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

Continuous Drain Current (ID) :

88A

Avalanche Energy Rating (Eas) :

220 mJ

Number of Terminations :

3

Reverse Recovery Time :

38 ns

Series :

HEXFET®

Dual Supply Voltage :

100V

Power Dissipation-Max :

200W Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Turn On Delay Time :

24 ns

Radiation Hardening :

No

Voltage - Rated DC :

100V

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

4V @ 150μA

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rise Time :

80ns

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

10m Ω @ 58A, 10V

Transistor Element Material :

SILICON

Height :

9.017mm

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Mount :

Through Hole

Fall Time (Typ) :

50 ns

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Pins :

3

Terminal Finish :

MATTE TIN OVER NICKEL

FET Type :

N-Channel

Published :

2004

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Lead Pitch :

2.54mm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Turn-Off Delay Time :

55 ns

ECCN Code :

EAR99

Length :

10.6426mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V