IRFB4410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.01Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10m Ω @ 58A, 10V

Power Dissipation-Max :

250W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

220 mJ

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Surface Mount :

No

Published :

2007

Drain Current-Max (Abs) (ID) :

75A

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

380A

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

100V