IRFB4332PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs (Max) :

±30V

Lead Free :

Lead Free

Number of Channels :

1

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

33m Ω @ 35A, 10V

ECCN Code :

EAR99

Voltage - Rated DC :

250V

Threshold Voltage :

5V

Power Dissipation :

390W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Width :

4.82mm

Dual Supply Voltage :

250V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Published :

2008

Mount :

Through Hole

Radiation Hardening :

No

Length :

10.66mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Series :

HEXFET®

Resistance :

33mOhm

Case Connection :

DRAIN

Current Rating :

60A

Termination :

Through Hole

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~175°C TJ

Recovery Time :

290 ns

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

250V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

390W Tc

Mounting Type :

Through Hole

Nominal Vgs :

5 V

Input Capacitance (Ciss) (Max) @ Vds :

5860pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Height :

19.8mm

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

60A