IRFB4321GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

83A

Drain to Source Breakdown Voltage :

150V

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

175°C

Width :

4.826mm

Supplier Device Package :

TO-220AB

Rds On (Max) @ Id, Vgs :

15mOhm @ 33A, 10V

Threshold Voltage :

5V

Package / Case :

TO-220-3

Radiation Hardening :

No

Nominal Vgs :

5 V

Length :

10.668mm

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Packaging :

Tube

Min Operating Temperature :

-55°C

Published :

2009

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

60ns

Turn-Off Delay Time :

25 ns

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Mounting Type :

Through Hole

Power Dissipation :

330W

Input Capacitance :

4.46nF

Element Configuration :

Single

Drain to Source Resistance :

15mOhm

Rds On Max :

15 mΩ

Turn On Delay Time :

18 ns

Contact Plating :

Tin

Power Dissipation-Max :

330W Tc

Number of Pins :

3

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 25V

Fall Time (Typ) :

35 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

83A Tc

Series :

HEXFET®

Height :

16.51mm

Drain to Source Voltage (Vdss) :

150V

Vgs (Max) :

±30V