IRFB4310ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Power Dissipation :

250W

Case Connection :

DRAIN

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Mount :

Through Hole

Length :

10.668mm

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Pins :

3

Recovery Time :

40 ns

Published :

2008

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Mounting Type :

Through Hole

Termination :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 150μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

100V

Drain to Source Breakdown Voltage :

100V

Resistance :

6mOhm

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Pulsed Drain Current-Max (IDM) :

560A

Number of Elements :

1

Height :

9.017mm

Continuous Drain Current (ID) :

140A

Transistor Element Material :

SILICON

Power Dissipation-Max :

250W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Width :

4.826mm

Series :

HEXFET®

Turn On Delay Time :

20 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Fall Time (Typ) :

57 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3

Threshold Voltage :

4V