IRFB4310ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

140A

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Recovery Time :

40 ns

Number of Pins :

3

Factory Lead Time :

12 Weeks

Width :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation :

250W

Resistance :

6mOhm

Length :

10.668mm

Nominal Vgs :

4 V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Terminations :

3

Transistor Element Material :

SILICON

Height :

9.017mm

Pulsed Drain Current-Max (IDM) :

560A

Threshold Voltage :

4V

Turn On Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Turn-Off Delay Time :

55 ns

Dual Supply Voltage :

100V

Packaging :

Tube

Rise Time :

60ns

Drain to Source Breakdown Voltage :

100V

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation-Max :

250W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Case Connection :

DRAIN

Mount :

Through Hole

Termination :

Through Hole

Fall Time (Typ) :

57 ns

Series :

HEXFET®