IRFB4310PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

550A

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

75A

Fall Time (Typ) :

78 ns

Packaging :

Tube

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Radiation Hardening :

No

Mounting Type :

Through Hole

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

140A

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Peak Reflow Temperature (Cel) :

250

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Recovery Time :

68 ns

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Turn On Delay Time :

26 ns

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Voltage - Rated DC :

100V

Lead Free :

Lead Free

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

980 mJ

Contact Plating :

Tin

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Terminations :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

130A

Height :

9.02mm

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

Length :

10.6426mm

Number of Elements :

1

Rise Time :

110ns

Width :

4.82mm

Turn-Off Delay Time :

68 ns

Published :

2004

Mount :

Through Hole

Series :

HEXFET®

Resistance :

7mOhm

Power Dissipation-Max :

300W Tc

Nominal Vgs :

4 V