IRFB4310PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

26 ns

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

980 mJ

Number of Terminations :

3

Height :

9.02mm

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Resistance :

7mOhm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

75A

Power Dissipation-Max :

300W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Dual Supply Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Pulsed Drain Current-Max (IDM) :

550A

Width :

4.82mm

Published :

2004

Termination :

Through Hole

Contact Plating :

Tin

Case Connection :

DRAIN

Length :

10.6426mm

Recovery Time :

68 ns

Continuous Drain Current (ID) :

130A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Number of Elements :

1

Lead Free :

Lead Free

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Transistor Application :

SWITCHING

Nominal Vgs :

4 V

Power Dissipation :

300W

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

78 ns

Turn-Off Delay Time :

68 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Mount :

Through Hole

Rise Time :

110ns

Number of Pins :

3

Current Rating :

140A