IRFB4310GPBF
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- Mfr.Part #
- IRFB4310GPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO220AB
- Stock
- 72,925
- In Stock ：
- 72,925
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7670pF @ 50V
- Length :
- 10.668mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Min Operating Temperature :
- -55°C
- Published :
- 2008
- Rds On Max :
- 7 mΩ
- Power Dissipation :
- 300W
- Turn On Delay Time :
- 26 ns
- Width :
- 4.826mm
- Drain to Source Breakdown Voltage :
- 100V
- Nominal Vgs :
- 4 V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 68 ns
- Vgs (Max) :
- ±20V
- Height :
- 16.51mm
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 130A
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 7.67nF
- Fall Time (Typ) :
- 78 ns
- Series :
- HEXFET®
- Element Configuration :
- Single
- Rise Time :
- 110ns
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-220AB
- Drain to Source Resistance :
- 7mOhm
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 75A, 10V
- Datasheets
- IRFB4310GPBF
N-Channel Tube 7mOhm @ 75A, 10V ±20V 7670pF @ 50V 250nC @ 10V 100V TO-220-3
IRFB4310GPBF Overview
A device's maximum input capacitance is 7670pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFB4310GPBF Features
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
single MOSFETs transistor is 7mOhm
a 100V drain to source voltage (Vdss)
IRFB4310GPBF Applications
There are a lot of Infineon Technologies
IRFB4310GPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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