IRFB42N20DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Voltage - Rated DC :

200V

Package / Case :

TO-220-3

Recovery Time :

330 ns

Number of Elements :

1

Length :

10.5156mm

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Rise Time :

69ns

Published :

2001

Number of Pins :

3

Nominal Vgs :

5.5 V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

200V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Element Configuration :

Single

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Continuous Drain Current (ID) :

44A

Turn On Delay Time :

18 ns

Power Dissipation :

300W

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

42.6A

Rds On (Max) @ Id, Vgs :

55m Ω @ 26A, 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 25V

Lead Free :

Contains Lead, Lead Free

Packaging :

Tube

Resistance :

55Ohm

Width :

4.69mm

Threshold Voltage :

5.5V

Dual Supply Voltage :

200V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

29 ns

Number of Terminations :

3

Power Dissipation-Max :

2.4W Ta 330W Tc

Series :

HEXFET®

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Height :

15.24mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

42A