IRFB42N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

29 ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

42.6A

Lead Free :

Contains Lead, Lead Free

Dual Supply Voltage :

200V

Recovery Time :

330 ns

Power Dissipation :

300W

Mounting Type :

Through Hole

Rise Time :

69ns

Element Configuration :

Single

Number of Terminations :

3

Nominal Vgs :

5.5 V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Threshold Voltage :

5.5V

ECCN Code :

EAR99

Power Dissipation-Max :

2.4W Ta 330W Tc

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 25V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Height :

15.24mm

Voltage - Rated DC :

200V

Turn On Delay Time :

18 ns

FET Type :

N-Channel

Width :

4.69mm

Transistor Application :

SWITCHING

Resistance :

55Ohm

Published :

2001

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

32 ns

Length :

10.5156mm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

55m Ω @ 26A, 10V

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

44A

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Number of Pins :

3

Current Rating :

42A