IRFB42N20D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

510 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 25V

DS Breakdown Voltage-Min :

200V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

180A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

55m Ω @ 26A, 10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Vgs (Max) :

±30V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

44A

Power Dissipation-Max :

2.4W Ta 330W Tc

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.055Ohm

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Mounting Type :

Through Hole

Terminal Position :

Single

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE