IRFB4233PBF
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- Mfr.Part #
- IRFB4233PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 230V 56A TO220AB
- Stock
- 5,447
- In Stock ：
- 5,447
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5510pF @ 25V
- Supplier Device Package :
- TO-220AB
- Nominal Vgs :
- 5 V
- FET Type :
- N-Channel
- Input Capacitance :
- 5.51nF
- Power Dissipation-Max :
- 370W Tc
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 37 mΩ
- Termination :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 230V
- Turn-Off Delay Time :
- 51 ns
- Length :
- 10.6426mm
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 230V
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Package / Case :
- TO-220-3
- Min Operating Temperature :
- -40°C
- Number of Elements :
- 1
- Width :
- 4.82mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 37mOhm @ 28A, 10V
- Number of Pins :
- 3
- Published :
- 2007
- Dual Supply Voltage :
- 276V
- Continuous Drain Current (ID) :
- 56A
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Power Dissipation :
- 370W
- Packaging :
- Tube
- Mount :
- Through Hole
- Turn On Delay Time :
- 31 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Threshold Voltage :
- 5V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Resistance :
- 37mOhm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -40°C~175°C TJ
- Height :
- 16.51mm
- Datasheets
- IRFB4233PBF
N-Channel Tube 37mOhm @ 28A, 10V ±30V 5510pF @ 25V 170nC @ 10V 230V TO-220-3
IRFB4233PBF Overview
A device's maximum input capacitance is 5510pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 56A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=230V, and this device has a drain-to-source breakdown voltage of 230V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 51 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 37mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.To operate this transistor, you need to apply a 230V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFB4233PBF Features
a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 230V voltage
the turn-off delay time is 51 ns
single MOSFETs transistor is 37mOhm
a threshold voltage of 5V
a 230V drain to source voltage (Vdss)
IRFB4233PBF Applications
There are a lot of Infineon Technologies
IRFB4233PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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