IRFB4229PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Height :

16.51mm

Operating Temperature :

-40°C~175°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 25V

Threshold Voltage :

5V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Length :

10.6426mm

Number of Terminations :

3

Dual Supply Voltage :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

REACH SVHC :

No SVHC

Width :

4.82mm

Radiation Hardening :

No

Fall Time (Typ) :

21 ns

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Lead Free :

Lead Free

Series :

HEXFET®

Recovery Time :

290 ns

Power Dissipation-Max :

330W Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn-Off Delay Time :

30 ns

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

31ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±30V

Packaging :

Tube

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

5 V

Rds On (Max) @ Id, Vgs :

46m Ω @ 26A, 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

250V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

330mW

Continuous Drain Current (ID) :

46A

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

46mOhm