IRFB4228PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Operating Temperature :

-40°C~175°C TJ

Current Rating :

-83A

Drain to Source Resistance :

15mOhm

Mount :

Through Hole

Threshold Voltage :

3V

Height :

16.51mm

Termination :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Max Operating Temperature :

175°C

FET Type :

N-Channel

Min Operating Temperature :

-40°C

Voltage - Rated DC :

-150V

Nominal Vgs :

30 V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Dual Supply Voltage :

150V

Turn-Off Delay Time :

24 ns

Number of Elements :

1

Resistance :

15mOhm

Recovery Time :

110 ns

Number of Pins :

3

Rds On Max :

15 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

4530pF @ 25V

Series :

HEXFET®

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

150V

Vgs (Max) :

±30V

Power Dissipation-Max :

330W Tc

Mounting Type :

Through Hole

Published :

2007

Factory Lead Time :

12 Weeks

Length :

10.6426mm

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

150V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

4.53nF

Current - Continuous Drain (Id) @ 25°C :

83A Tc

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

83A

Width :

4.82mm

Power Dissipation :

330W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

15mOhm @ 33A, 10V