IRFB4227PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Threshold Voltage :

5V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3

Series :

HEXFET®

Recovery Time :

150 ns

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

5 V

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

175°C

Published :

2004

Power Dissipation-Max :

330W Tc

Packaging :

Tube

Turn On Delay Time :

33 ns

Operating Temperature :

-40°C~175°C TJ

Fall Time (Typ) :

31 ns

Mount :

Through Hole

ECCN Code :

EAR99

Resistance :

24mOhm

Number of Channels :

1

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Dual Supply Voltage :

200V

Height :

19.8mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Power Dissipation :

330W

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Length :

10.6426mm

Number of Elements :

1

Vgs (Max) :

±30V

Number of Pins :

3

Termination :

Through Hole

Rise Time :

20ns

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

260A

Case Connection :

DRAIN

FET Type :

N-Channel

Mounting Type :

Through Hole

Element Configuration :

Single

Width :

4.82mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 46A, 10V

Turn-Off Delay Time :

21 ns

Continuous Drain Current (ID) :

65A