IRFB4215PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

115A

Fall Time (Typ) :

110 ns

Min Operating Temperature :

-55°C

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Rise Time :

160ns

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

77 ns

Mount :

Through Hole

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation :

270W

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Power Dissipation-Max :

270W Tc

Current - Continuous Drain (Id) @ 25°C :

115A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Element Configuration :

Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

9mOhm @ 54A, 10V

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Package / Case :

TO-220-3

Resistance :

9Ohm

Input Capacitance :

4.08nF

Input Capacitance (Ciss) (Max) @ Vds :

4080pF @ 25V

Drain to Source Resistance :

9mOhm

Dual Supply Voltage :

60V

Published :

2010

Rds On Max :

9 mΩ

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

115A

Supplier Device Package :

TO-220AB