IRFB41N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

25 ns

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

470 mJ

Rise Time :

63ns

Packaging :

Tube

Current Rating :

41A

Number of Elements :

1

Number of Terminations :

3

Turn On Delay Time :

16 ns

Power Dissipation-Max :

200W Tc

Threshold Voltage :

5.5V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Nominal Vgs :

5.5 V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Drain to Source Breakdown Voltage :

150V

Mount :

Through Hole

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Fall Time (Typ) :

14 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

14 Weeks

Width :

4.69mm

Length :

10.5156mm

Continuous Drain Current (ID) :

41A

Published :

2003

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

260 ns

Package / Case :

TO-220-3

ECCN Code :

EAR99

Series :

HEXFET®

Drain-source On Resistance-Max :

0.045Ohm

Termination :

Through Hole

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Height :

8.763mm

Case Connection :

DRAIN

Dual Supply Voltage :

150V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Power Dissipation :

200W

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

41A Tc

JEDEC-95 Code :

TO-220AB

Lead Free :

Contains Lead, Lead Free