IRFB4137PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

18 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

69m Ω @ 24A, 10V

Threshold Voltage :

5V

Rise Time :

23ns

Radiation Hardening :

No

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

38A

Height :

9.02mm

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

300V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5168pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Power Dissipation-Max :

341W Tc

Published :

2012

ECCN Code :

EAR99

Fall Time (Typ) :

20 ns

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

38A Tc

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±20V

Element Configuration :

Single

Package / Case :

TO-220-3

Length :

10.67mm

Turn-Off Delay Time :

34 ns

Width :

4.83mm

Resistance :

69mOhm

Power Dissipation :

341W