IRFB4115GPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

104A

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

150V

Turn-Off Delay Time :

41 ns

Peak Reflow Temperature (Cel) :

250

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

380W Tc

Mount :

Through Hole

Packaging :

Tube

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

220 mJ

Rise Time :

73ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

380W

Width :

4.826mm

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

Transistor Application :

SWITCHING

Height :

16.51mm

Turn On Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Published :

2009

JESD-609 Code :

e3

Package / Case :

TO-220-3

Fall Time (Typ) :

39 ns

Vgs (Max) :

±20V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Rds On (Max) @ Id, Vgs :

11m Ω @ 62A, 10V

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Resistance :

11mOhm

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

420A

Number of Pins :

3