IRFB4115GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Packaging :

Tube

Resistance :

11mOhm

Number of Elements :

1

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

150V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

11m Ω @ 62A, 10V

Length :

10.668mm

Rise Time :

73ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

Mounting Type :

Through Hole

Series :

HEXFET®

Turn On Delay Time :

18 ns

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Fall Time (Typ) :

39 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

380W

Pulsed Drain Current-Max (IDM) :

420A

Case Connection :

DRAIN

Width :

4.826mm

Nominal Vgs :

3 V

JESD-609 Code :

e3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn-Off Delay Time :

41 ns

Avalanche Energy Rating (Eas) :

220 mJ

Peak Reflow Temperature (Cel) :

250

Continuous Drain Current (ID) :

104A

Radiation Hardening :

No

Power Dissipation-Max :

380W Tc

Height :

16.51mm

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2009